0. Preface
1. Hexagonal Semiconductors
1.1. Crystal structure
1.2. Strain and stress
1.2.1. Hooke’s law
1.2.2. Inclined crystal planes
1.2.3. Polarization
1.3. Band structure calculations
1.3.1. General facts
1.3.2. The Brillouin approximation
1.3.3. The Bloch approximation
1.3.4. The kp-method
1.3.5. Transission energies – the influence of strain
1.4. Matrix method to solve the 1-dimensional Schrödinger equation
2. Spatial Resolution of CL Spectroscopy in the Scanning Electron Microscope
2.1. Penetration depth – Monte-Carlo-simulation of electron trajectories
2.2. Lateral spatial resolution of cathodoluminescence investigations
2.2.1. Diffusion length in Galliumnitride
2.2.2. Avoiding artefacts from charge pile ups
3. Structural Defects
3.1. Dislocations
3.2. Stacking faults
3.2.1. Basal plane stacking faults
3.2.2. Prismatic stacking faults
3.2.3. Luminescence at basal plane stacking faults in GaN
4. Measurement Setup
5. Basal Plane Stacking Faults in semipolar GaN
5.1. Sample structure
5.2. Cathodoluminescence measurements
5.3. TEM investigations
5.4. Temperature dependence of I2-BSF luminescence
5.5. Considerations about the strain situation
5.6. Discussion of results
6. Basal plane stacking faults in AlGaN and their Influence on Al Content
6.1. Sample structure
6.2. Cathodoluminescence measurements
6.3. TEM investigations
6.4. Simulation of defects in AlGaN
6.5. X-ray investigations
6.6. Discussion of results
6.7. Consequence of these defects in AlGaN layer of light emitting diodes
6.7.1. Sample structure
6.7.2. Results
6.7.3. Discussion
7. ZnO/GaN/InGaN Core Shell Nanorods
7.1. Structure and growth of samples unter investigation
7.2. Cathodoluminescence investigations
7.2.1. Sample without quantum well
7.2.2. Sample with quantum well
7.2.3. Campating SEM-CL and TEM investigations
7.2.4. Discussion of results
8. Summary
9. Some words to thank…
10. Publications
10.1. List of publications
10.2. Own talks and posters
10.2.1. Talks
10.2.2. Poster contributions
Literature