Journal contributions:
V.C. Angadi, F. Benz, I. Tischer, K. Thonke, T. Aoki, and T. Walther:
Evidence of terbium and oxygen co-segregation in annealed AlN:Tb.
Appl. Phys. Lett., 110, 222102 (2017).
http://doi.org/10.1063/1.4984237
M. Hocker, P. Maier, I. Tischer, T. Meisch, M. Caliebe, F. Scholz, M. Mundszinger, U. Kaiser, and K. Thonke:
Three-dimensional cathodoluminescence characterization of a semipolar GaInN based LED sample.
Jour. App. Phys., 121, 075702 (2017).
http://doi.org/10.1063/1.4976204
M. Hocker, P. Maier, L. Jerg, I. Tischer, G. Neusser, C. Kranz, M. Pristovsek, C.J. Humphreys, R.A.R. Leute, D. Heinz, O. Rettig, F. Scholz, and K. Thonke:
Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence.
Jour. Appl. Phys., 120, 085703 (2016).
http://dx.doi.org/10.1063/1.4961417
M. Hocker, I. Tischer, B. Neuschl, K. Thonke, M. Caliebe, M. Klein, and F. Scholz:
Stacking fault emission in GaN: Influence of n-type doping.
Jour. Appl. Phys., 119, 185703 (2016).
http://scitation.aip.org/content/aip/journal/jap/119/18/10.1063/1.4949512
T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, F. Scholz, D. Hommel, and A. Rosenauer:
Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy.
Jour. Appl. Phys., 119, 175701 (2016).
http://scitation.aip.org/content/aip/journal/jap/119/17/10.1063/1.4948385
M. Knab, M. Hocker, T. Felser , I. Tischer, J. Wang , F. Scholz, and K. Thonke:
EBIC investigations on polar and semipolar InGaN LED structures.
Phys. Stat. Sol. B, 253, 1, 126 (2016).
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201552284/abstract
I. Tischer, M. Hocker, B. Neuschl, M. Madel, M. Feneberg, M. Schirra, M. Frey, M. Knab, P. Maier, T. Wunderer, R.A.R. Leute, J. Wang, F. Scholz, J. Biskupek, J. Bernhard, U. Kaiser, U. Simon, L. Dieterle, H. Groiss, E. Müller, D. Gerthsen, and K. Thonke:
Optical Properties in Nitride Semiconductors.
Invited Feature Paper in Jour. Mat. Res., 30, 20, 2977 (2015).
http://dx.doi.org/10.1557/jmr.2015.273
M. Madel, J. Jakob, F. Huber, B. Neuschl, S. Bauer, Y. Xie, I. Tischer, and K. Thonke:
Optical gas sensing by micro-photoluminescence on multiple and single ZnO nanowires.
Phys. Stat. Sol. A, 212, 8, 1862 (2015).
http://dx.doi.org/10.1002/pssa.201431688
N.A. Nikiforova, N.N. Mikheev, M.A. Stepovich, M. Hocker, and I. Tischer:
The measurement of the diffusion length and the life time of free excitons in gallium nitride by cathodoluminescence, ander different conditions of luminescence excitation.
Jour. of Surface Investigation, X-Ray, Synchrotron, and Neutron Techniques, 9, 839 (2015).
http://dx.doi.org/10.1134/S102745101504031X
Никифорова Н.А., Степович М.А., Михеев Н.Н., Hocker M., Tischer I.:
ИЗМЕРЕНИЕ ДИФФУЗИОННОЙ ДЛИНЫ И ВРЕМЕНИ ЖИЗНИ СВОБОДНЫХ ЭКСИТОНОВ В НИТРИДЕ ГАЛЛИЯ КАТОДОЛЮМИНЕСЦЕНТНЫМ МЕТОДОМ ПРИ РАЗЛИЧНЫХ УСЛОВИЯХ ВОЗБУЖДЕНИЯ ЛЮМИНЕСЦЕНЦИИ.
Поверхность. Рентгеновские, синхротронные и нейронные исследования 8, 84 (2015).
http://dx.doi.org/10.7868/S0207352815080119
I. Tischer, M. Frey, M. Hocker, L. Jerg, M. Madel, B. Neuschl, K. Thonke, R.A.R. Leute, F. Scholz, H. Groiss, E. Müller, and D. Gerthsen:
Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution.
Phys. Stat. Sol. B, 11, 2321 (2014).
http://dx.doi.org/10.1002/pssb.201451252
K. Thonke, I. Tischer, M. Hocker, M. Schirra, K. Fujan, M. Wiedenmann, R. Schneider, M. Frey, and M. Feneberg:
Nanoscale characterisation of semiconductors by cathodoluminescence.
IOP Conf. Series: Mat. Sci. and Eng., 55, 012018 (2014).
http://dx.doi.org/10.1088/1757-899X/55/1/012018
T. Meisch, M. Alimoradi-Jazi, B. Neuschl, M. Klein, I. Tischer, K. Thonke, and F. Scholz:
Crystal quality improvement of semipolar (20-21) GaN on patterned sapphire substrates by in-situ deposited SiN mask.
Proc. SPIE, 8986, 89860A (2014).
http://dx.doi.org/10.1117/12.2037238
D. Heinz, M. Fikry, T. Aschenbrenner, M. Schowalter, T. Meisch, M. Madel, F. Huber, M. Hocker, M. Frey, I. Tischer, B. Neuschl, T. Mehrtens, K. Müller, A. Rosenauer, D. Hommel, K. Thonke, and F. Scholz:
GaN tubes with coaxial non- and semipolar GaInN quantum wells.
Phys. Stat. Sol. C, 11, 648 (2014).
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201300526/abstract
, , , , , , , , and (Invited) Large Area Semipolar GaN Grown on Foreign Substrates
ECS Transactions 61, 4 101 (2014)
http://ecst.ecsdl.org/content/61/4/101.abstract
J. Wang, D. Zhang, R.A.R. Leute, T. Meisch, D. Heinz, I. Tischer, M. Hocker, K. Thonke, and F. Scholz:
InGaN/GaN based semipolar green converters.
Jour. Crys. Growth, 370, 120 (2013).
http://dx.doi.org/10.1016/j.jcrysgro.2012.10.046
I. Tischer, M. Hocker, M. Fikry, M. Madel, M. Schied, Z. Ren, F. Scholz, and K. Thonke:
Optical Properties of ZnO/GaN/InGaN Core-Shell Nanorods.
Jap. Jour. Appl. Phys., 52, 075201 (2013).
http://dx.doi.org/10.7567/JJAP.52.075201
F. Scholz, K. Forghani, M. Klein, O. Klein, U. Kaiser, B. Neuschl, I. Tischer, M. Feneberg, K. Thonke, S. Lazarev, S. Bauer, and T. Baumbach:
Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer.
Jap. Jour. Appl. Phys., 52, 08JJ07 (2013).
http://dx.doi.org/10.7567/JJAP.52.08JJ07
S. Lazarev, S. Bauer, T. Meisch, M. Bauer, I. Tischer, M. Barchuk, K. Thonke, V. Holy, F. Scholz, and T. Baumbach:
Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11-22) GaN layers grown from the sidewall of an r-patterned sapphire substrate.
Jour. Appl. Crystall., 46, 1425 (2013).
http://onlinelibrary.wiley.com/doi/10.1107/S0021889813020438/abstract
M. Fikry, Z. Ren, M. Madel, I. Tischer, K. Thonke, and F. Scholz:
Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs.
Jour. Crys. Growth, 370, 319 (2013).
http://www.sciencedirect.com/science/article/pii/S0022024812006987
Y. Xie, W. Jie, A. Reiser, M. Feneberg, I. Tischer, M. Wiedenmann, M. Madel, R. Frey, U. Roeder, and K. Thonke:
Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers.
Mat. Lett., 83, 31 (2012).
http://www.sciencedirect.com/science/article/pii/S0167577X12007999
F. Scholz, S. Schwaiger, J. Däubler, I. Tischer, K. Thonke, S. Neugebauer, S. Metzner, F. Bertram, J. Christen, H. Lengner, J. Thalmair, and J. Zweck:
Semipolar GaInN quantum well structures on large area substrates.
Phys. Stat. Sol. B, 249, 464 (2012).
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201100342/abstract
I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen:
I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band.
Phys. Rev. B, 83, 035314 (2011).
http://link.aps.org/doi/10.1103/PhysRevB.83.035314
I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen:
Stacking fault-related luminescence features in semi-polar GaN.
Phys. Stat. Sol. B, 248, 611 (2011).
http://dx.doi.org/10.1002/pssb.201046498
M. Fikry, M. Madel, I. Tischer, K. Thonke, and F. Scholz:
Luminescence properties of epitaxially grown GaN and InGaN layers around ZnO nanopillars.
Phys. Stat. Sol. A, 208, 1582 (2011).
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201001068/abstract
G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M. Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M. Feneberg, I. Tischer, K. Fujan, K. Thonke, and D. Hommel:
Light-emitting diode based on mask and catalyst free grown N-polar GaN nanorods.
Nanotechnology, 22, 265202 (2011).
http://dx.doi.org/10.1088/0957-4484/22/26/265202
M. Madel, Y. Xie, I. Tischer, B. Neuschl, M. Feneberg, R. Frey, and K. Thonke:
Catalytic growth of hexagonally aligned ZnO nanorods.
Phys. Stat. Sol. B, 248, 1915 (2011).
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201147101/abstract
B. Neuschl, K.J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, and F. Scholz:
Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers.
Appl. Phys. Lett., 97, 192108 (2010).
http://dx.doi.org/10.1063/1.3515865
K.J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser:
Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets.
Appl. Phys. Lett., 97, 101904 (2010).
http://dx.doi.org/10.1063/1.3487935
L.D. Yao, D. Weisssenberger, M. Dürrschnabel, D. Gerthsen, I. Tischer, M. Wiedenmann, M. Feneberg, A. Reiser, and K. Thonke:
Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing.
Jour. Appl. Phys., 77, 125215 (2008).
http://dx.doi.org/10.1063/1.3132865
Talks (presenting author only):
I. Tischer, M. Hocker, B. Neuschl, M. Madel, M. Feneberg, M. Schirra, M. Frey, M. Knab, P. Maier, T. Wunderer, R.A.R. Leute, J. Wang, F. Scholz, J. Biskupek, J. Bernhard, U. Kaiser, U. Simon, L. Dieterle, H. Groiss, E. Müller, D. Gerthsen, and K. Thonke:
Optical Properties in Nitride Semiconductors.
Invited talk on MRS Spring Meeting in San Francisco, CA, USA. 04/06/2015.
I. Tischer, M. Hocker, M. Frey, K. Thonke, R.A.R. Leute, F. Scholz, H. Groiss, E. Müller, and D. Gerthsen:
Direct identification of luminescence from I 1 type basal plane stacking faults in semipolar AlGaN layers with low Al content.
DPG spring meeting in Berlin, Germany, 04/01/2014.
I. Tischer, M. Hocker, M. Frey, K. Thonke, R.A.R. Leute, F. Scholz, H. Groiss, E. Müller, and D. Gerthsen:
Investigation of defect related luminescence features in semipolar AlGaN layers on GaN.
PolarCoN summer school in Werniggerode, Germany, 09/11/2013.
I. Tischer, M. Hocker, M. Frey, K. Thonke, R.A.R. Leute, and F. Scholz:
Investigation of defect related luminescence features in semipolar AlGaN layers on GaN.
DPG spring meeting in Berlin, Germany, 03/14/2013.
I. Tischer, M. Hocker, M. Frey, K. Thonke, R.A.R. Leute, and F. Scholz:
Optical Investigation Of AlGaN Layers On Semipolar GaN.
PolarCoN project meeting in Berlin, Germany, 02/19/2013.
I. Tischer, K. Fujan, M. Feneberg, R. Sauer, K. Thonke, T. Wunderer, S. Schwaiger, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen:
Defect-related cathodoluminescence features in GaN stripes with semipolar facets.
Seminar talk in Prof. Arakawa’s group, University of Tokyo, Japan, 10/23/2012.
I. Tischer, M. Madel, M. Hocker, K. Thonke, M. Fikry, Z. Ren, and F. Scholz:
Optical properties of ZnO/GaN/InGaN core shell nanorods.
DPG spring meeting in Berlin, Germany, 03/28/2012.
I. Tischer:
Graphene – a two-dimensional system.
Talk in institute seminar of Institute of Quantaum Matter, University of Ulm, Germany, 01/10/2011.
I. Tischer, M. Feneberg, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen:
Detailed investigation of the defect-related emissions around 3.3 eV in GaN ELOG structures.
DPG spring meeting in Berlin, Germany, 03/25/2010.
I. Tischer, K. Fujan, M. Feneberg, R. Sauer, K. Thonke, T. Wunderer, S. Schwaiger, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen:
Defect-related cathodoluminescence features in GaN stripes with semipolar facets.
EMRS Spring Meeting in Strasbourg, France, 06/09/2009.
I. Tischer, M. Feneberg, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen:
Defect-related cathodoluminescence in ELOG GaN structures.
DPG spring meeting in Dresden, Germany, 02/26/2009.
I. Tischer, M. Schirra, M. Feneberg, G.M. Prinz, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, A. Chuvilin, U. Kaiser, I. Knoke, and E. Meissner:
Spatial Distribution of structural defects in GaN.
DPG spring meeting in Berlin, 02/29/2008.
Poster contributions (presenting author only):
I. Tischer, M. Hocker, M. Frey, K. Thonke, R. Leute, F. Scholz, W. van Mierlo, J. Biskupek, and U. Kaiser:
Defect related luminescence and Al diffusion in GaN/AlGaN heterostructures.
EMRS Spring Meeting in Strasbourg, France, 05/27-31/2013.
I. Tischer, M. Hocker, M. Frey, K. Thonke, R. Leute, F. Scholz, W. van Mierlo, J. Biskupek, and U. Kaiser:
Spatially resolved cathodoluminescence investigation of defects in semipolar AlGaN layers on GaN.
International Workshop on Nitride Semiconductors (IWN) in Sapporo, Japan, 10/14-19/2012.
I. Tischer, M. Fikry, M. Madel, F. Scholz, and K. Thonke:
ZnO-GaN-InGaN/GaN core/shell nanorods.
DPG spring meeting in Dresden, 03/17/2011.